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The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(111) substrates

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The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(111) substrates

Auteurs : RBID : Pascal:14-0004189

Descripteurs français

Pascal (Inist)
- Analyse contrainte, Méthode MOCVD, Spectre Raman, Diode électroluminescente, Stabilité structurale, Optimisation, Mécanisme croissance, Distribution contrainte, Photoluminescence, Nitrure de gallium, Nitrure d'indium, Multicouche, Puits quantique multiple, InGaN, GaN.

English descriptors

KwdEn :
- Gallium nitride, Growth mechanism, Indium nitride, Light emitting diode, MOCVD, Multiple layer, Multiple quantum well, Optimization, Photoluminescence, Raman spectrum, Stress analysis, Stress distribution, Structure stability.

Abstract

The tensile stress in light-emitting diode (LED)-on-Si(111) multilayer structures must be reduced so that it does not compromise the multiple quantum well emission wavelength uniformity and structural stability. In this paper it is shown for non-optimized LED structures grown on Si(11 1) substrates that both emission wavelength uniformity and structural stability can be achieved within the same growth process. In order to gain a deeper understanding of the stress distribution within such a structure, cross-sectional Raman and photo-luminescence spectroscopy techniques were developed. It is observed that for a Si:GaN layer grown on a low-temperature (LT) AlN intermediate layer there is a decrease in compressive stress with increasing Si:GaN layer thickness during MOCVD growth which leads to a high level of tensile stress in the upper part of the layer. This may lead to the development of cracks during cooling to room temperature. Such a phenomenon may be associated with annihilation of defects such as dislocations. Therefore, a reduction of dislocation intensity should take place at the early stage of GaN growth on an AlN or AlGaN layer in order to reduce a build up of tensile stress with thickness. Furthermore, it is also shown that a prolonged three dimensional GaN island growth on a LT AIN interlayer for the reduction of dislocations may result in a reduction in the compressive stress in the resulting GaN layer.

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Pascal:14-0004189

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<author><name>QUANZHONG JIANG</name>
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<author><name sortKey="Allsopp, Duncan W E" uniqKey="Allsopp D">Duncan W. E. Allsopp</name>
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<author><name sortKey="Bowen, Chris R" uniqKey="Bowen C">Chris R. Bowen</name>
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<author><name sortKey="Wang, Wang N" uniqKey="Wang W">Wang N. Wang</name>
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<term>Multiple layer</term>
<term>Multiple quantum well</term>
<term>Optimization</term>
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<front><div type="abstract" xml:lang="en">The tensile stress in light-emitting diode (LED)-on-Si(111) multilayer structures must be reduced so that it does not compromise the multiple quantum well emission wavelength uniformity and structural stability. In this paper it is shown for non-optimized LED structures grown on Si(11 1) substrates that both emission wavelength uniformity and structural stability can be achieved within the same growth process. In order to gain a deeper understanding of the stress distribution within such a structure, cross-sectional Raman and photo-luminescence spectroscopy techniques were developed. It is observed that for a Si:GaN layer grown on a low-temperature (LT) AlN intermediate layer there is a decrease in compressive stress with increasing Si:GaN layer thickness during MOCVD growth which leads to a high level of tensile stress in the upper part of the layer. This may lead to the development of cracks during cooling to room temperature. Such a phenomenon may be associated with annihilation of defects such as dislocations. Therefore, a reduction of dislocation intensity should take place at the early stage of GaN growth on an AlN or AlGaN layer in order to reduce a build up of tensile stress with thickness. Furthermore, it is also shown that a prolonged three dimensional GaN island growth on a LT AIN interlayer for the reduction of dislocations may result in a reduction in the compressive stress in the resulting GaN layer.</div>
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The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(111) substrates

The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(111) substrates

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri